P-Channel MOSFET Transistor

Specification For Download
LPM9017-MOSFET
P ChannelP/N Channel:
1Output Channel:
-30Voltage(V):
68mΩ@VGS=-4.5VRDS(ON)(mΩ):
1IDSS(uA):
4000Max Current(mA):
Low impedance, Quick response,Small currentSpecial Features:
SOT23Package:


P-Channel Enhancement Mode Field Effect Transistor



General Description

The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
 


Applications
 

Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card

 


Features
 

-30V/-4A,RDS(ON) <58mΩ(typ.)@VGS=-10V
-30V/-3.0A,RDS(ON)<68mΩ(typ.)@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
SOT23 Package
 

Marking Information
 

Please see specification. 
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We will send a copy to you as fast as we can.
 





 

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