P-Channel MOSFET Transistor

Specification For Download
LPM9435-MOSFET
P ChannelP/N Channel:
1Output Channel:
-30Voltage(V):
38mΩ@VGS=-10VRDS(ON)(mΩ):
1IDSS(uA):
5800Max Current(mA):
Low impedance, Fast heat dissipationSpecial Features:
SOP8Package:


P-Channel Enhancement Mode Field Effect Transistor



General Description

The LPM9435 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high side switching.
 


Applications
 

 Portable Media Players
 Cellular and Smart mobile phone
 LCD
 DSC Sensor
 Wireless Card

 


Features
 

 -30V/-5.8A,RDS(ON)=42mΩ(typ.)@VGS=-10V
 -30V/-4.0A,RDS(ON)=65mΩ(typ.)@VGS=-4.5V
 Super high density cell design for extremely
low RDS(ON)
 SOP8 Package
 

Marking Information
 

Please see specification. 
Please ask our service mailbox for what you want which is marketing@lowpowersemi.com.
We will send a copy to you as fast as we can.
 






 

Consultation:086-755-33000088
E-Mail:marketing@lowpowersemi.com
Copyright © LPS Consulting 2005,All Right Reserved. 粤ICP备14043779号-1