Power MOSFET Module

Specification For Download
LPM9022-MOSFET
NP/N Channel:
2Output Channel:
20Voltage(V):
20mΩ@VGS=4.5VRDS(ON)(mΩ):
1IDSS(uA):
6000Max Current(mA):
Low impedance, Quick response,Small currentSpecial Features:
TDFN-8Package:


Dual N -Channel Enhancement Power MOSFET



General Description

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halogen-free.
 


Applications
 

 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging

 


Features
 

 Trench Technology
 Single NMOS: VDS=20V, ID=6A
RDS(ON) < 26mΩ @ VGS=2.5V
RDS(ON) < 20mΩ @ VGS=4.5V
 Super high density cell design
 Extremely Low Threshold Voltage
 Small package DFN-6L 2*3mm
 

Marking Information
 

Please see specification. 
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We will send a copy to you as fast as we can.
 




 

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