Power MOSFET Module

Specification For Download
LPM9029C-MOSFET
N+PP/N Channel:
2Output Channel:
20/-30Voltage(V):
50mΩ@VGS=-4.5VRDS(ON)(mΩ):
1IDSS(uA):
6500+4500Max Current(mA):
Low impedance, Quick response,Small currentSpecial Features:
SOP8Package:


N and P-Channel Enhancement Power MOSFET



General Description

The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free.
 


Applications
 

 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging

 


Features
 

 Trench Technology
 NMOS:
VNDS=20V, IND=12A
RNDS(ON) < 26mΩ @ VGS=2.5V
RNDS(ON) < 20mΩ @ VGS=4.5V
 PMOS:
VPDS=-20V, IPD=-4.5A
RPDS(ON) < 100mΩ @ VGS=-2.5V
RPDS(ON) < 68mΩ @ VGS=-4.5V
 Super high density cell design
 Extremely Low Threshold Voltage
 Small package SOP-8
 

Marking Information
 

Please see specification. 
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We will send a copy to you as fast as we can.
 




 

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