N-Channel MOSFET Transistor

Specification For Download
LPM9006-MOSFET
N ChannelP/N Channel:
1Output Channel:
30Voltage(V):
29mΩ@VGS=10VRDS(ON)(mΩ):
1IDSS(uA):
5800Max Current(mA):
Low impedance, Quick response, Small volumeSpecial Features:
SOT23Package:


N-Channel Enhancement Mode Field Effect Transistor



General Description

The LPM9006 is the N-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
 


Applications
 

Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card

 


Features
 

30V/5.8A,RDC(ON)=29mΩ(typ.)@VGS=10V
-30V/4.9A,RDC(ON)=32mΩ(typ.)@VGS=4.5V
-30V/3.0A,RDC(ON)=38mΩ(typ.)@VGS=2.5V
Super high density cell design for extremely low RDC(ON)
SOT23 Package
 

Marking Information
 

Please see specification. 
Please ask our service mailbox for what you want which is marketing@lowpowersemi.com.
We will send a copy to you as fast as we can.
 







 

Consultation:086-755-33000088
E-Mail:marketing@lowpowersemi.com
Copyright © LPS Consulting 2005,All Right Reserved. 粤ICP备14043779号-1