N-Channel MOSFET Transistor

Specification For Download
LPM3414-MOSFET
N ChannelP/N Channel:
1Output Channel:
20Voltage(V):
62mΩ@VGS=4.5VRDS(ON)(mΩ):
1IDSS(uA):
3000Max Current(mA):
Low impedance, Fast response, Small volumeSpecial Features:
SOT23Package:


20V/3A N-Channel Enhancement Mode Field Effect Transistor



General Description

The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching is needed.
 


Applications
 

 Portable Media Players/MP3 players
 Cellular and Smart mobile phone
 LCD
 DSC Sensor
 Wireless Card

 


Features
 

20V/3A, RDS(ON)<62mΩ(max.)@VGS=4.5V
 20V/2.5A, RDS(ON)<86mΩ(max.)@VGS=2.5V
 Super high density cell design for extremely low
RDS(ON)
 SOT23 Package
 
 

Marking Information
 

Please see specification. 
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We will send a copy to you as fast as we can.
 



 

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