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概述
The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
应用
◆Portable Media Players/MP3 players
◆Cellular and Smart mobile phone
◆LCD
◆DSC Sensor
◆Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-15
GS电压最大值(V)
±12
DS漏电流(uA)
1
输出电流(A)
4.2
导通内阻(mΩ)
85
特征
特征
◆-15V/-4.0A,RDS(ON)<58mΩ(typ.)@VGS=-10V
◆-15V/-3.0A,RDS(ON)<68mΩ(typ.)@VGS=-4.5V
◆Super high density cell design for extremely low RDS(ON)
◆SOT23 Package
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