30V/4A P-Channel Enhancement Mode Field Effect Transistor
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LPM9007
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概述
The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching.
应用
◆ Portable Media Players ◆ Cellular and Smart mobile phone ◆ LCD ◆ DSC Sensor ◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-30
GS电压最大值(V)
±20
DS漏电流(uA)
1
输出电流(A)
4
导通内阻(mΩ)
80
特征
特征
◆ -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V ◆ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V ◆ Super high density cell design for extremely low RDC(ON) ◆ SOT23 Package
