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概述
The LPM9435 is the P-channel logic enhancementmode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high side switching.
应用
◆ Portable Media Players
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
数据参数
数据参数
封装
SOP-8
DS电压最大值(V)
-30
GS电压最大值(V)
±12
DS漏电流(uA)
1
输出电流(A)
5.8
导通内阻(mΩ)
-
特征
特征
◆ -30V/-5.8A,RDS(ON)=42mΩ(typ.)@VGS=-10V
◆ -30V/-4.0A,RDS(ON)=65mΩ(typ.)@VGS=-4.5V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOP8 Package
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