The LPM8205 integrates two N-Channel Enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM8205 is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc. ◆ DC-DC converter circuit ◆ Power Switch ◆ Load Switch ◆ Charging
数据参数
数据参数
封装
SOT23-6/TSSOP8
DS电压最大值(V)
20
GS电压最大值(V)
±12
DS漏电流(uA)
1
输出电流(A)
7.6
导通内阻(mΩ)
29
特征
特征
◆ 100% EAS Guaranteed ◆ Green Device Available ◆ Super Low Gate Charge ◆ Excellent CdV/dt effect decline ◆ Advanced high cell density Trenchtechnology
