LPM3407 -30V/-2.6A P-Channel Enhancement Mode Field Effect Transistor
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概述
The LPM3407 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
应用
◆ Portable Media Players ◆ Cellular and Smart mobile phone ◆ LCD ◆ DSC Sensor ◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-30
GS电压最大值(V)
±20
VGS（TH） -TYP(V)
-1.6
输出电流(A)
2.6
RDSON (mΩ) at VGS=2.5V （TYP)
-
RDSON (mΩ) at VGS=2.5V （MAX)
-
RDSON (mΩ) at VGS=4.5V （TYP)
140
RDSON (mΩ) at VGS=4.5V （MAX)
200
RDSON (mΩ) at VGS=10V （TYP)
100
RDSON (mΩ) at VGS=10V （MAX)
130
Category
Trench
特征
特征
◆ -30V/-2A,RDS(ON)=140mΩ(typ.)@VGS=-4.5V ◆ -30V/-2.6A,RDS(ON)=100mΩ(typ.)@VGS=-10V ◆ Super high density cell design for extremely low RDS(ON) ◆ SOT23 Package
