LPM9017 30V/4A P-Channel Enhancement Mode Field Effect Transistor
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LPM9017
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概述
The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
应用
◆ Portable Media Players ◆ Cellular and Smart mobile phone ◆ LCD ◆ DSC Sensor ◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-30
GS电压最大值(V)
±12
DS漏电流(uA)
1
输出电流(A)
4
导通内阻(mΩ)
85
特征
特征
◆ -30V/-4.0A,RDS(ON)＜58mΩ(typ.)@VGS=-10V ◆ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V ◆ Super high density cell design for extremely low RDS(ON) ◆ SOT23 Package
